Sr Principal Device Design & Integration Engineer

Master’s degree or PhD in Electrical Engineering or related fields, with 5+ years of GaN development experience

Strong familiarity with GaN device physics, device design, wafer processing, layout and characterization. LV emode is a plus.

Proficient in data manipulation and analysis skill. Familiar with JMP.

Exceptional verbal and written communication skills.

Self-motivated and adaptable. Able to work independently as well as in a team environment.

Familiarity with reliability physics and failure analysis is a plus.

Renesas is an embedded semiconductor solution provider driven by its Purpose ‘

To Make Our Lives Easier

.’ As the industry’s leading expert in embedded processing with unmatched quality and system-level know-how, we have evolved to provide scalable and comprehensive semiconductor solutions for automotive, industrial, infrastructure, and IoT industries based on the broadest product portfolio, including High Performance Computing, Embedded Processing, Analog & Connectivity, and Power.

With a diverse team of over 22,000 professionals in more than 30 countries, we continue to expand our boundaries to offer enhanced user experiences through digitalization and usher into a new era of innovation. We design and develop sustainable, power-efficient solutions today that help people and communities thrive tomorrow, ‘

To Make Our Lives Easier

.’

The Sr. Principle Device Design

and Integration Engineer

will lead the device development of the new

low

-

voltage